MEMS/NEMS
ALD2
Cambridge NanoTech Plasma ALD - Metal
Cambridge NanoTech Plasma ALD - Oxide
The Atomic Layer Deposition (ALD) tool is used to deposit atomic layers of material. The majority of ALD reactions use two chemicals, typically called precursors. These precursors react with the surface of a material one at a time in a sequential, self-limiting, manner.
The ALD2 uses 4 precursor gases and pulses each with a N2 purge following each pulse. Each cycle of gases deposits an atomic layer of material via typically two half-reactions. The tool is currently set up to deposit Al2O3, HfO2, and Er2O3.
Specifications:
wafer pieces up to 6" wafer
25C-250C
base pressure 5mT
Capabilities:
ALD - Dielectrics Deposition - Alumina
ALD - Dielectrics Deposition - Erbium Oxide
ALD - Dielectrics Deposition - Hafnia
General Equipment Specification - ALD Systems
PVD75 RF Sputterer
The Cambridge Fiji Plasma ALD system uses ALD precursors to deposit pin-hole free films in ultra-high aspect ratio features. Film thickness can be controlled to within 1nm.
Specifications:
-Dual chamber w/ load-locks
-Chuck temperature from RT to 500C
-RF Plasma (up to 300W)
-Up to 8" (200mm) wafer, maximum 0.20in/5mm thick
-Auto-logs run data (pressure, temp, etc)
Materials available:
Al2O3, AlN
ZnO
Capabilities:
ALD - Dielectrics Deposition - Alumina
ALD - Dielectrics Deposition - Zinc Oxide
ALD - Metal Deposition - Platinum
ALD - Nitride Deposition - Aluminum Nitride
General Equipment Specification - ALD Systems
Unifilm Sputterer
The Cambridge Fiji Plasma ALD system uses ALD precursors.
Specifications:
-Dual chamber w/ load-locks
-Chuck temperature from RT to 500C
-RF Plasma (up to 300W)
-Up to 8" (200mm) wafer, maximum 0.20in/5mm thick
-Auto-logs run data (pressure, temp, etc)
Materials available:
Al2O3, HfO2, SiO2, ZrO2, TiO2 TiN
AlN, HfN, ZrN
Capabilities:
ALD - Dielectrics Deposition - Alumina
ALD - Dielectrics Deposition - Hafnia
ALD - Dielectrics Deposition - Silica
ALD - Dielectrics Deposition - Titania
ALD - Dielectrics Deposition - Zirconia
ALD - Nitride Deposition - Aluminum Nitride
ALD - Nitride Deposition - Hafnium Nitride
ALD - Nitride Deposition - Silicon Nitride
ALD - Nitride Deposition - Titanium Nitride
Zeiss Ultra60 FE-SEM
The RF sputterer can be used to deposit many dielectrics. Coatings are performed by accelerating ions or an argon oxygen mixture into the surface of a sputter target, which is made of the material to be applied to the sample. -Sputter two or more dissimilar materials simultaneously for complete control of film stoichiometry (co-deposition) -Max RF power 325W -Integrated touch screen control -Single substrate up to 12" diameter -Multiple substrate up to 4" diameter -Substrate fixture rotation up to 20rpm.
Capabilities
Deposition - Dielectrics Deposition - RF Sputterer Dielectrics Deposition - Metal Deposition - Aluminum Deposition - Metal Deposition - Copper Deposition - Metal Deposition - Gold Deposition - Metal Deposition - Iron Deposition - Metal Deposition - Nickel Deposition - Metal Deposition - Platinum
The Unifilm Multisource Sputtering System deposits thin metal films in a argon-enriched low vacuum. The Unifilm Sputterer has a deposition monitor to quickly and accurately measure Source distributions, a computer-controlled Planetary System, and a computer model of the source-planetary system. -Process wafers up to 4" -Deposition Processes: Aluminum, Aluminum/Silicon, Gold, Titanium, Copper, Chromium, Molybdenum, Molybdenum/Copper, Nickel, Silicon, Tantalum -DC/RF power.
Capabilities
Deposition - Metal Deposition - Chromium Deposition - Metal Deposition - Copper Deposition - Metal Deposition - Gold Deposition - Metal Deposition - Platinum Deposition - Metal Deposition - Tanatalum Deposition - Metal Deposition - Titanium Deposition - Metal Deposition - Tungsten Deposition - Silicon General
The Zeiss scanning electron microscope is the instrument of choice for clear and precise imaging on large delicate specimems or uncoated wafers. The ULTRA 60 enables clear topographic imaging with the high efficiency In-lens SE detector. Ultra high resolution imaging at low kV Extra large 6-axes motorised fully eucentric stage with fine stage control Large sample throughput with integrated 8" airlock High efficiency In-lens SE detector for high contrast surface imaging.
Capabilities
General Equipment Specification - Characterization
Imaging - FESEM
Metrology - Imaging
Radioactive - Radioactive