MEMS/NEMS

ALD2

Cambridge NanoTech Plasma ALD - Metal

The Atomic Layer Deposition (ALD) tool is used to deposit atomic layers of material. The majority of ALD reactions use two chemicals, typically called precursors. These precursors react with the surface of a material one at a time in a sequential, self-limiting, manner.

The ALD2 uses 4 precursor gases and pulses each with a N2 purge following each pulse. Each cycle of gases deposits an atomic layer of material via typically two half-reactions. The tool is currently set up to deposit Al2O3, HfO2, and Er2O3.

Specifications:

wafer pieces up to 6" wafer

25C-250C

base pressure 5mT

Capabilities:

ALD - Dielectrics Deposition - Alumina

ALD - Dielectrics Deposition - Erbium Oxide

ALD - Dielectrics Deposition - Hafnia

General Equipment Specification - ALD Systems

The Cambridge Fiji Plasma ALD system uses ALD precursors to deposit pin-hole free films in ultra-high aspect ratio features. Film thickness can be controlled to within 1nm.

Specifications:

-Dual chamber w/ load-locks

-Chuck temperature from RT to 500C

-RF Plasma (up to 300W)

-Up to 8" (200mm) wafer, maximum 0.20in/5mm thick

-Auto-logs run data (pressure, temp, etc)

Materials available:

Al2O3, AlN, ZnO

Capabilities:

ALD - Dielectrics Deposition - Alumina

ALD - Dielectrics Deposition - Zinc Oxide

ALD - Metal Deposition - Platinum

ALD - Nitride Deposition - Aluminum Nitride

General Equipment Specification - ALD Systems

PVD75 RF Sputterer

Cambridge NanoTech Plasma ALD - Oxide

The RF sputterer can be used to deposit many dielectrics. Coatings are performed by accelerating ions or an argon oxygen mixture into the surface of a sputter target, which is made of the material to be applied to the sample. -Sputter two or more dissimilar materials simultaneously for complete control of film stoichiometry (co-deposition) -Max RF power 325W -Integrated touch screen control -Single substrate up to 12" diameter -Multiple substrate up to 4" diameter -Substrate fixture rotation up to 20rpm.

Capabilities

Deposition - Dielectrics Deposition - RF Sputterer Dielectrics Deposition - Metal Deposition - Aluminum Deposition - Metal Deposition - Copper Deposition - Metal Deposition - Gold Deposition - Metal Deposition - Iron Deposition - Metal Deposition - Nickel Deposition - Metal Deposition - Platinum

The Cambridge Fiji Plasma ALD system uses ALD precursors to deposit pin-hole free films in ultra-high aspect ratio features. Film thickness can be controlled to within 1nm.

Specifications:

-Dual chamber w/ load-locks

-Chuck temperature from RT to 500C

-RF Plasma (up to 300W)

-Up to 8" (200mm) wafer, maximum 0.20in/5mm thick

-Auto-logs run data (pressure, temp, etc)

Materials available:

Al2O3, HfO2, SiO2, ZrO2, TiO2 TiN

AlN, HfN, ZrN

Capabilities:

ALD - Dielectrics Deposition - Alumina

ALD - Dielectrics Deposition - Hafnia

ALD - Dielectrics Deposition - Silica

ALD - Dielectrics Deposition - Titania

ALD - Dielectrics Deposition - Zirconia

ALD - Nitride Deposition - Aluminum Nitride

ALD - Nitride Deposition - Hafnium Nitride

ALD - Nitride Deposition - Silicon Nitride

ALD - Nitride Deposition - Titanium Nitrid

The Cambridge Fiji Plasma ALD system uses ALD precursors to deposit pin-hole free films in ultra-high aspect ratio features. Film thickness can be controlled to within 1nm.

Specifications:

-Dual chamber w/ load-locks

-Chuck temperature from RT to 500C

-RF Plasma (up to 300W)

-Up to 8" (200mm) wafer, maximum 0.20in/5mm thick

-Auto-logs run data (pressure, temp, etc)

Materials available:

Al2O3, HfO2, SiO2, ZrO2, TiO2 TiN

AlN, HfN, ZrN

Capabilities:

ALD - Dielectrics Deposition - Alumina

ALD - Dielectrics Deposition - Hafnia

ALD - Dielectrics Deposition - Silica

ALD - Dielectrics Deposition - Titania

ALD - Dielectrics Deposition - Zirconia

ALD - Nitride Deposition - Aluminum Nitride

ALD - Nitride Deposition - Hafnium Nitride

ALD - Nitride Deposition - Silicon Nitride

ALD - Nitride Deposition - Titanium Nitrid

Unifilm Sputterer

The Unifilm Multisource Sputtering System deposits thin metal films in a argon-enriched low vacuum. The Unifilm Sputterer has a deposition monitor to quickly and accurately measure Source distributions, a computer-controlled Planetary System, and a computer model of the source-planetary system. -Process wafers up to 4" -Deposition Processes: Aluminum, Aluminum/Silicon, Gold, Titanium, Copper, Chromium, Molybdenum, Molybdenum/Copper, Nickel, Silicon, Tantalum -DC/RF power.

Capabilities

Deposition - Metal Deposition - Chromium Deposition - Metal Deposition - Copper Deposition - Metal Deposition - Gold Deposition - Metal Deposition - Platinum Deposition - Metal Deposition - Tanatalum Deposition - Metal Deposition - Titanium Deposition - Metal Deposition - Tungsten Deposition - Silicon General

FEI Nova Nanolab 200 FIB/SEM

Zeiss Ultra60 FE-SEM

The Nova Nanolab is designed to be a complete nanotechnology laboratory in one tool. It combines ultra-high resolution field emission scanning electron microscopy (SEM) and precise focused ion beam (FIB) etch and deposition. It extends your applications range for nanoscale prototyping, machining, 2D and 3D-characterization and analysis. -Resolution @ 30 kV STEM- 1.0nm -Resolution @ 5 kV (TLD-SE)- 2.0nm -Minimum deposition line width

Capabilities

General Equipment Specification - Characterization

Radioactive - Radioactive

Hitachi HD-2700 200kV STEM

The Zeiss scanning electron microscope is the instrument of choice for clear and precise imaging on large delicate specimems or uncoated wafers. The ULTRA 60 enables clear topographic imaging with the high efficiency In-lens SE detector. Ultra high resolution imaging at low kV Extra large 6-axes motorised fully eucentric stage with fine stage control Large sample throughput with integrated 8" airlock High efficiency In-lens SE detector for high contrast surface imaging.

Capabilities

General Equipment Specification - Characterization

Imaging - FESEM

Metrology - Imaging

Radioactive - Radioactive

Hitachi S-3500H SEM

The Hitachi HD-2700 200kV STEM can image samples at 80kV, 120kV, and 200kV. It has a unique secondary electron detector - simultaneous HAADF, BF, and SE imaging along with EDX. Lattice resolution - including a SE resolution of 0.3nm - can be achieved quickly, given proper sample prepara

The Hitachi 3500H series scanning electron microscope offers high resolution imaging in a vacuum.